Semiconductor Cleaning

Cleaning method of semiconductor substrate
Application JP19154292A events
1992-06-25　Application filed by Shin Etsu Chemical Co Ltd, Shin Etsu Handotai Co Ltd
1992-06-25　Priority to JP4191542A
1994-01-21　Publication of JPH0613363A
1998-06-25　Application granted
1998-06-25　Publication of JP2769406B2
2013-06-25　Anticipated expiration
Inventor　Munehisa Yanagisawa宗久柳沢Susumu Higuchi晋樋口Yuki Tamura雄輝田村Norio Otaki紀夫大滝Satoshi Kuwata敏桑田Current Assignee
The listed assignees may be inaccurate.　Shin Etsu Chemical Co Ltd Shin Etsu Handotai Co Ltd

A GaP (100) polished wafer was used as Neovac M.
Cyclic methylpolysiloxane (D 4 )

(Example 1),
linear methylpolysiloxane (M 2 ) obtained by immersing and soaking R-200 [trade name of vacuum pump oil manufactured by Matsumura Oil Research Institute Co., Ltd.] D)
(example 2),
cyclic methylpolysiloxane mixture (D 3: D 4: D 5: D 6 = 4: 64: 27:5)
(Example 3), cyclic / linear methylpolysiloxane mixture (M 2 D: D 3 : D 4 : D 5 : D 6 = 50: 2: 32: 13.5: 2.5)
(Example 4) 1,1,1-trichloroethane
(Comparative Example 1)
ultrasonic cleaning for 40 minutes,
ethanol for 10 minutes,
further for 10 minutes.
Ultrasonic cleaning with water was performed for 10 minutes,
finally IPA vapor drying
(a method of dehydrating and drying with isopropyl alcohol heated to about 120 ° C to 150 ° C) was performed for 3 minutes.
The ultrasonic cleaning device used for the above ultrasonic cleaning is manufactured by Tokyo Ultrasonic Equipment Co., Ltd., and the oscillation frequency is 25 KHz ± 50.
It was used under the conditions of 0 Hz and output: 300 W.
The cleaning liquid according to the present invention is
It was confirmed that it has a cleaning ability comparable to that of 1,1-trichloroethane.